Wafer Edge Bead Cleaning with Laser Radiation and Reactive Gas

Abstract:

The purpose of this study is to investigate and optimize the process parameters for cleaning the top, bottom, and apex edges of silicon wafers using laser radiation and reactive gas. A secondary purpose is to conduct photoresist edge bead and post-etch polymer film removal (EBR) experiments to determine the minimum controllable edge exclusion in EBR processing to improve die yield. [ An overall purpose is to identify a robust and environmentally sound process for wafer edge cleaning and a hardware configuration (stand alone or track integrated) that can be cost effectively produced for device manufacturing.

• Periodical: Solid State Phenomena (Volume 187)
• Pages: 117-120
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.187.117
• Online since: April 2012
• Authors: David J. Elliott, Victoria M. Chaplick, Eugene Degenkolb, Kenneth Harte, Ronald P. Millman Jr.
• Keywords: Apex, Defectivity, Edge Bead, Edge Exclusion, Laser

References

[1] K. Jami et al. Optimization of edge die yield through defectivity reduction, Solid State Technology, 28 October, (2009).

[2] I. Pollentier et al, Influences of Immersion Lithography on Wafer Edge Defectivity, Yield Management Solutions, Issue 1, (2008).

[3] International Technology Roadmap for Semiconductors, http: /www. itrs. net.

[4] Model courtesy of George Deltoro, Silicon-Pacific Consulting, Mission Viejo, CA 92692.