All-Wet, Metal-Compatible High-Dose-Implanted Photoresist Strip

George G. Totir; Mahmoud Khojasteh; Ronald Nunes; Emanuel I. Cooper; Matthew Kern; Kim van Berkel; Makonnen Payne; Ronald Dellaguardia; Bang To; Siegfried Maurer

doi:10.4028/www.scientific.net/SSP.187.101

Paper Titles

Measurement of Adhesion Force of Resist to Wafer by Using SAICAS: Characteristics of Lift-Off of Resist by Steam-Water Mixed Spray
p.85

High Temperature SPM Process Study for Stripping of Implanted Photoresist
p.89

Study of Controlled Oxygen Diffusion Approaches for Advanced Photoresist Strip
p.93

Non-Oxidizing Solvent-Based Strip of Ion Implanted Photoresist
p.97

All-Wet, Metal-Compatible High-Dose-Implanted Photoresist Strip
p.101

Applicable Solvent Photoresist Strip Process for High-K/Metal Gate
p.105

Study on Resist Removal Using Electrolyzed Sulfuric Acid Solution in Comparison with SPM
p.109

Using the Background Signal of a Light Scattering Tool for I/I Photo Resist Strip Optimization and Monitoring
p.113

Wafer Edge Bead Cleaning with Laser Radiation and Reactive Gas
p.117

HomeSolid State PhenomenaSolid State Phenomena Vol. 187All-Wet, Metal-Compatible High-Dose-Implanted...

All-Wet, Metal-Compatible High-Dose-Implanted Photoresist Strip

Abstract:

An all-wet process based on a novel chemistry has been developed to enable the removal of high-dose implanted photoresist in the presence of exposed metal layers and other materials typical of advanced gate stacks.

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Periodical:

Solid State Phenomena (Volume 187)

Pages:

101-104

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.187.101

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Online since:

April 2012

Authors:

George G. Totir, Mahmoud Khojasteh, Ronald Nunes, Emanuel I. Cooper, Matthew Kern, Kim van Berkel, Makonnen Payne, Ronald Dellaguardia, Bang To, Siegfried Maurer

Keywords:

22nm, 32nm, All-Wet, Dopant, HDIS, High-k, Implanted Resist Removal, Metal Gate, Selective, Si, TiN

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