Study of Controlled Oxygen Diffusion Approaches for Advanced Photoresist Strip

Abstract:

Two alternative plasma strip processes were developed to meet the photoresist (PR) removal requirements of future technology nodes. Compared to traditional oxidizing chemistries, the new plasma strip approaches showed significantly lower silicon oxidation and substrate loss, while achieving good residue removal capabilities. Plasma strip-induced dopant loss and profile changes were also evaluated for gate-first and gate-last high-k/metal gate applications.

• Periodical: Solid State Phenomena (Volume 187)
• Pages: 93-96
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.187.93
• Online since: April 2012
• Authors: Shi Jian Luo, Orlando Escorcia, David Mattson, Carlo Waldfried, Dong Wan Roh, Ivan Berry III
• Keywords: Dopant Retention, HDI Strip, Metal Oxidation, Residue Removal, Substrate Loss

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