Effect of Drying Liquid on Stiction of High Aspect Ratio Structures

Gyu Hyun Kim; Sung Hyuk Cho; Ji Hye Han; Young Bang Lee; Chi Hyeong Roh; Kwon Hong; Sung Ki Park

doi:10.4028/www.scientific.net/SSP.187.75

Paper Titles

A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme
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Static Charge Induced Damage during Lightly Doped Drain (LDD) by Single Wafer Cleaning Process
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Surface Charging Induced Gate Oxide Degradation
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Investigation of Wet Clean Induced Dielectric Surface Static Charge and its Impact on Gate Oxide Integrity
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Effect of Drying Liquid on Stiction of High Aspect Ratio Structures
p.75

Elucidation of an Isopropyl Alcohol (IPA) Adsorption Phenomenon on a Wafer Surface for Achieving an Ultra-Clean and IPA-Saving Drying Process in the Batch Cleaning System
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Measurement of Adhesion Force of Resist to Wafer by Using SAICAS: Characteristics of Lift-Off of Resist by Steam-Water Mixed Spray
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High Temperature SPM Process Study for Stripping of Implanted Photoresist
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Study of Controlled Oxygen Diffusion Approaches for Advanced Photoresist Strip
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HomeSolid State PhenomenaSolid State Phenomena Vol. 187Effect of Drying Liquid on Stiction of High Aspect...

Effect of Drying Liquid on Stiction of High Aspect Ratio Structures

Abstract:

In this paper, we studied stiction behavior of HAR pattern (line and space pattern) dependence on adhesion force with surface tension of drying liquid and surface contact angle. Surface tension effect was evaluated with various drying liquids such as IPA, ethanol and HFE (hydrofluoroether) chemical. Patterns treated by dHF, APM and surface modifier were introduced to investigate dependence of pattern collapse on contact angle. The high temperature D.I. water rinse followed by high temperatures drying using liquid with low surface tension was a most effective. Furthermore, surface modification method using HMDS (hexamethyldisilazane) chemical was also effective.