Surface Charging Induced Gate Oxide Degradation

Chun Ling Chiang; C.M. Cheng; J.Y. Hsieh; J.H. Liao; L.W. Yang; T.H. Yang; K.C. Chen; Chih Yuan Lu

doi:10.4028/www.scientific.net/SSP.187.67

Paper Titles

Deposition Wet-Etching Deposition (DWD) Method for Polysilicon Gate Fill-In at Flash Memory
p.49

Poly-Silicon Wet Removal for Replacement Gate Integration Scheme: Impact of Process Parameters on the Removal Rate
p.53

A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme
p.57

Static Charge Induced Damage during Lightly Doped Drain (LDD) by Single Wafer Cleaning Process
p.63

Surface Charging Induced Gate Oxide Degradation
p.67

Investigation of Wet Clean Induced Dielectric Surface Static Charge and its Impact on Gate Oxide Integrity
p.71

Effect of Drying Liquid on Stiction of High Aspect Ratio Structures
p.75

Elucidation of an Isopropyl Alcohol (IPA) Adsorption Phenomenon on a Wafer Surface for Achieving an Ultra-Clean and IPA-Saving Drying Process in the Batch Cleaning System
p.79

Measurement of Adhesion Force of Resist to Wafer by Using SAICAS: Characteristics of Lift-Off of Resist by Steam-Water Mixed Spray
p.85

HomeSolid State PhenomenaSolid State Phenomena Vol. 187Surface Charging Induced Gate Oxide Degradation

Surface Charging Induced Gate Oxide Degradation

Abstract:

In dual gate process, wet strip is an important procedure to remove the photoresist. Two wet strip methods of spinning-dry and batch type were evaluated in this study. Several methods were applied to measure the surface charging density [1, 2]. The Quantox system has been well known as an inline tester with noncontact measurement such as surface voltage, surface photo voltage (SPV), flatband voltage, surface barrier high, minority carrier diffusion length, recombination life time, generation life time, and et. al [3-6]. It is an useful in-line monitor equipment for oxide quality evaluation.