Static Charge Induced Damage during Lightly Doped Drain (LDD) by Single Wafer Cleaning Process

Ted Guo; Tsung Hsun Tsai; Chin Cheng Chien; Michael Chan; Chan Lon Yang; Jun Yuan Wu

doi:10.4028/www.scientific.net/SSP.187.63

Paper Titles

Study on Al₂O₃ Film in Anhydrous HF Vapor
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Deposition Wet-Etching Deposition (DWD) Method for Polysilicon Gate Fill-In at Flash Memory
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Poly-Silicon Wet Removal for Replacement Gate Integration Scheme: Impact of Process Parameters on the Removal Rate
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A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme
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Static Charge Induced Damage during Lightly Doped Drain (LDD) by Single Wafer Cleaning Process
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Surface Charging Induced Gate Oxide Degradation
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Investigation of Wet Clean Induced Dielectric Surface Static Charge and its Impact on Gate Oxide Integrity
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Effect of Drying Liquid on Stiction of High Aspect Ratio Structures
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Elucidation of an Isopropyl Alcohol (IPA) Adsorption Phenomenon on a Wafer Surface for Achieving an Ultra-Clean and IPA-Saving Drying Process in the Batch Cleaning System
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Static Charge Induced Damage during Lightly Doped Drain (LDD) by Single Wafer Cleaning Process

Abstract:

The present work reports some approaches to reduce the static charge defects induced during single wafer cleaning process. Increase conductivity of DIW with CO₂, adding backside rinse and IPA drying sequence optimization were evidenced to be effective by surface potential difference with Quantox tool. TEM and EELS were also used for analysis of volcano-like discharge defects.