A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme

Guang Yaw Hwang; J.H. Liao; S.F. Tzou; Mark Lin; Autumn Yeh; David Lou; Eason Chen; Weien Huang; Gowri Kamarthy; Kai Dong Xu; Amulya Athayde

doi:10.4028/www.scientific.net/SSP.187.57

Paper Titles

Study of the Etching Mechanism of Heavily Doped Si in HF
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Study on Al₂O₃ Film in Anhydrous HF Vapor
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Deposition Wet-Etching Deposition (DWD) Method for Polysilicon Gate Fill-In at Flash Memory
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Poly-Silicon Wet Removal for Replacement Gate Integration Scheme: Impact of Process Parameters on the Removal Rate
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A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme
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Static Charge Induced Damage during Lightly Doped Drain (LDD) by Single Wafer Cleaning Process
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Surface Charging Induced Gate Oxide Degradation
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Investigation of Wet Clean Induced Dielectric Surface Static Charge and its Impact on Gate Oxide Integrity
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Effect of Drying Liquid on Stiction of High Aspect Ratio Structures
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HomeSolid State PhenomenaSolid State Phenomena Vol. 187A Hybrid Dry-Wet Approach for Removal of a Dummy...

A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme

Abstract:

Beginning at the 45nm node, the semiconductor industry is moving to high-k gate dielectrics and metal gate electrodes for CMOS logic devices [. Although different approaches of building these devices are being pursued, most of the industry has consolidated behind a gate last approach, in which the transistor is built around a dummy poly polysilicon gate, which is subsequently removed and replaced with a metal gate. Current approaches to removing the dummy poly gate include plasma-based dry processes and liquid-phase wet etching.