Investigation of Wet Clean Induced Dielectric Surface Static Charge and its Impact on Gate Oxide Integrity

Shun Wu Lin; Vincent S. Chang; Matt Yeh; Eric Houyang

doi:10.4028/www.scientific.net/SSP.187.71

Paper Titles

Poly-Silicon Wet Removal for Replacement Gate Integration Scheme: Impact of Process Parameters on the Removal Rate
p.53

A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme
p.57

Static Charge Induced Damage during Lightly Doped Drain (LDD) by Single Wafer Cleaning Process
p.63

Surface Charging Induced Gate Oxide Degradation
p.67

Investigation of Wet Clean Induced Dielectric Surface Static Charge and its Impact on Gate Oxide Integrity
p.71

Effect of Drying Liquid on Stiction of High Aspect Ratio Structures
p.75

Elucidation of an Isopropyl Alcohol (IPA) Adsorption Phenomenon on a Wafer Surface for Achieving an Ultra-Clean and IPA-Saving Drying Process in the Batch Cleaning System
p.79

Measurement of Adhesion Force of Resist to Wafer by Using SAICAS: Characteristics of Lift-Off of Resist by Steam-Water Mixed Spray
p.85

High Temperature SPM Process Study for Stripping of Implanted Photoresist
p.89

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Investigation of Wet Clean Induced Dielectric Surface Static Charge and its Impact on Gate Oxide Integrity

Abstract:

The static electricity of wet clean was characterized by contactless surface voltage measurement on silicon oxide dielectric in this study. The paper shows surface static charge at wafer center caused by a single wafer spin cleaning tool. Deionized water (DIW) rinse was verified as the critical step of inducing static charge. It was demonstrated by metal oxide semiconductor (MOS) capacitor that such serious dielectric static charge would degrade gate oxide integrity (GOI). With dissolved CO₂ to lower DIW resistance, surface static charge at wafer center is reduced and degraded GOI is restored as a result.