High Temperature SPM Process Study for Stripping of Implanted Photoresist

Matt Yeh; Fan Yi Hsu; Shun Wu Lin; Ducky Liao; Eric Houyang; T.J. Yang; Scott Ku; C.M. Yang

doi:10.4028/www.scientific.net/SSP.187.89

Paper Titles

Investigation of Wet Clean Induced Dielectric Surface Static Charge and its Impact on Gate Oxide Integrity
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Effect of Drying Liquid on Stiction of High Aspect Ratio Structures
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Elucidation of an Isopropyl Alcohol (IPA) Adsorption Phenomenon on a Wafer Surface for Achieving an Ultra-Clean and IPA-Saving Drying Process in the Batch Cleaning System
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Measurement of Adhesion Force of Resist to Wafer by Using SAICAS: Characteristics of Lift-Off of Resist by Steam-Water Mixed Spray
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High Temperature SPM Process Study for Stripping of Implanted Photoresist
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Study of Controlled Oxygen Diffusion Approaches for Advanced Photoresist Strip
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Non-Oxidizing Solvent-Based Strip of Ion Implanted Photoresist
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All-Wet, Metal-Compatible High-Dose-Implanted Photoresist Strip
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Applicable Solvent Photoresist Strip Process for High-K/Metal Gate
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High Temperature SPM Process Study for Stripping of Implanted Photoresist

Abstract:

Advanced device is more sensitive to material loss and dopant fluctuation, that might strongly influence device performance. Conventional dry ash process for implanted photoresist strip can not meet the requirement of material loss minimization of advanced device. Full wet process for resist strip was first successfully demonstrated at 22nm structure wafer to gain 50% silicon loss reduction. Besides, full wet process also demonstrated defect cleaning performance was even better than conventional approach. This work focused on mechanism study of Si₃N₄ and SiO₂ film loss induced by high temperature SPM process.