Non-Oxidizing Solvent-Based Strip of Ion Implanted Photoresist

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Abstract:

The removal of ion implanted photoresist (II-PR) after implantation of ultra shallow extension and halo regions is considered as one of the most challenging front-end-of-line (FEOL) processing steps for 32nm and beyond CMOS technology nodes. Commonly used resist strip processes such as fluorine-based dry plasma ash and hot sulfuric/peroxide mixtures induce unacceptable levels of oxidation and material loss [1-.

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Solid State Phenomena (Volume 187)

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97-100

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April 2012

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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