Characterization of Low-k Dielectric Etch Residue on the Sidewall by Chemical Force Microscope

Abstract:

Atomic force microscope (AFM) with inclined sample measurement and hydrophobic functionalized AFM probe was used to visualize the sidewall of low-k pattern and allowed to characterize the hydrophobic characteristics on the sidewall after low-k etch. To functionalized the AFM probe, 1H,1H,2H,2H-Perfluorodecyltrichlorosilane (FDTS) as a hydrophobic film was coated on an AFM probe. Because of the magnitude of the phobic-phobic interaction force and the tip forced to make a phase shift. Using this technique the visualization and characterization of the etch residue on the low-k sidewall can be successfully performed. It is shown that the investigation toward an effective chemical clean for the etch residue removal could be applicable.

• Periodical: Solid State Phenomena (Volume 187)
• Pages: 197-200
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.187.197
• Online since: April 2012
• Authors: Tae Gon Kim, Quoc Toan Le, Samuel Suhard, Marcel Lux, Guy Vereecke, Martine Claes, Herbert Struyf, Stefan De Gendt, Paul W. Mertens, Marc Heyns
• Keywords: Chemical Force Microscope, Low-K, Post-Etch Residue Cleaning, Sidewall Metrology

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