Paper Titles

An Influence of Carbon on Intrinsic Gettering Quality and Circuit Performance
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Intrinsic Gettering in Nitrogen-Doped Cz-Si
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Application of Doped Polysilicon Layers in a BICMOS-Technology
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Self-Interstitial Atoms and Structure of Intrinsic Getter in Silicon Crystals
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Internal Gettering Effectiveness for Transition Metals /Fe,Ni/ in Cz-SI
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Intrinsic Gettering of Radiation Defects in Silicon Caused by High-Temperature Oxygen-Containing Defects
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Defect Engineering in Submicron CMOS Technologies
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Contamination Control in Si ULSI-Technology at the 10¹¹cm^-3 - Level and below
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Point Defect Engineering for ULSI Silicide Processing
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HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20Internal Gettering Effectiveness for Transition...

Internal Gettering Effectiveness for Transition Metals /Fe,Ni/ in Cz-SI

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Gettering and Defect Engineering in Semiconductor Technology IV

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Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

85-86

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.85

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Online since:

January 1991

Authors:

U. Woijciechowski

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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