Intrinsic Gettering of Radiation Defects in Silicon Caused by High-Temperature Oxygen-Containing Defects

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Periodical:

Solid State Phenomena (Volumes 19-20)

Edited by:

M. Kittler and H. Richter

Pages:

87-94

DOI:

10.4028/www.scientific.net/SSP.19-20.87

Citation:

V.B. Neimash et al., "Intrinsic Gettering of Radiation Defects in Silicon Caused by High-Temperature Oxygen-Containing Defects", Solid State Phenomena, Vols. 19-20, pp. 87-94, 1991

Online since:

January 1991

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$35.00

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