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Intrinsic Gettering in Nitrogen-Doped Cz-Si
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Application of Doped Polysilicon Layers in a BICMOS-Technology
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Self-Interstitial Atoms and Structure of Intrinsic Getter in Silicon Crystals
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Internal Gettering Effectiveness for Transition Metals /Fe,Ni/ in Cz-SI
p.85

Intrinsic Gettering of Radiation Defects in Silicon Caused by High-Temperature Oxygen-Containing Defects
p.87

Defect Engineering in Submicron CMOS Technologies
p.95

Contamination Control in Si ULSI-Technology at the 10¹¹cm^-3 - Level and below
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Point Defect Engineering for ULSI Silicide Processing
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Defect Control and Gettering in Cz-Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20Intrinsic Gettering of Radiation Defects in...

Intrinsic Gettering of Radiation Defects in Silicon Caused by High-Temperature Oxygen-Containing Defects

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Gettering and Defect Engineering in Semiconductor Technology IV

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Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

87-94

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.87

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Online since:

January 1991

Authors:

V.B. Neimash, T.R. Sagan, V.M. Tsmots, V.M. Siratskii, V.I. Shakhovtsov, V.L. Shindich

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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