Paper Titles

Self-Interstitial Atoms and Structure of Intrinsic Getter in Silicon Crystals
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Internal Gettering Effectiveness for Transition Metals /Fe,Ni/ in Cz-SI
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Intrinsic Gettering of Radiation Defects in Silicon Caused by High-Temperature Oxygen-Containing Defects
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Defect Engineering in Submicron CMOS Technologies
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Contamination Control in Si ULSI-Technology at the 10¹¹cm^-3 - Level and below
p.109

Point Defect Engineering for ULSI Silicide Processing
p.121

Defect Control and Gettering in Cz-Silicon
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Silicon Device Engineering by Intrinsic Point Defect Control
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Defect Engineering in a High-Voltage Substrate Technology
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HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20Contamination Control in Si ULSI-Technology at the...

Contamination Control in Si ULSI-Technology at the 10¹¹cm^-3 - Level and below

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Gettering and Defect Engineering in Semiconductor Technology IV

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Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

109-120

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.109

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Online since:

January 1991

Authors:

Werner Bergholz, G. Zoth, G. Götz, A. Saliov

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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