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Intrinsic Gettering of Radiation Defects in Silicon Caused by High-Temperature Oxygen-Containing Defects
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Defect Engineering in Submicron CMOS Technologies
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Contamination Control in Si ULSI-Technology at the 10¹¹cm^-3 - Level and below
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Point Defect Engineering for ULSI Silicide Processing
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Defect Control and Gettering in Cz-Silicon
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Silicon Device Engineering by Intrinsic Point Defect Control
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Defect Engineering in a High-Voltage Substrate Technology
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Thermal Wafer Warpage and its Avoidance
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Defects in Crystalline Silicon - History and Outlook
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HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20Defect Control and Gettering in Cz-Silicon

Defect Control and Gettering in Cz-Silicon

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Gettering and Defect Engineering in Semiconductor Technology IV

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Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

137-168

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.137

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Online since:

January 1991

Authors:

F.G. Kirscht, Eicke R. Weber, I. Babanskaya

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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