Gettering of Copper and Nickel in Czochralski Silicon by Oxide Particles: Dependence on Oxide Particle Density and Cooling Rate
p.39
p.39
On the Role of Stacking Faults in Copper Precipitation in Silicon
p.45
p.45
TEM Studies of the Gettering of Copper, Palladium and Nickel in Czochralski Silicon by Small Oxide Particles
p.51
p.51
An Influence of Carbon on Intrinsic Gettering Quality and Circuit Performance
p.57
p.57
Intrinsic Gettering in Nitrogen-Doped Cz-Si
p.65
p.65
Application of Doped Polysilicon Layers in a BICMOS-Technology
p.69
p.69
Self-Interstitial Atoms and Structure of Intrinsic Getter in Silicon Crystals
p.79
p.79
Internal Gettering Effectiveness for Transition Metals /Fe,Ni/ in Cz-SI
p.85
p.85
Intrinsic Gettering of Radiation Defects in Silicon Caused by High-Temperature Oxygen-Containing Defects
p.87
p.87
Intrinsic Gettering in Nitrogen-Doped Cz-Si
Abstract:
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Periodical:
Solid State Phenomena (Volumes 19-20)
Pages:
65-68
Citation:
Online since:
January 1991
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© 1991 Trans Tech Publications Ltd. All Rights Reserved
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