Physical Cleaning Enhancement Using Advanced Spray with Uniform Droplet Control

Ying Hsueh Chang Chien; Matt Yeh; Scott Ku; C.M. Yang; C.C. Chen; S.M. Jang; K. Izumoto; K. Sotoku; T. Tanaka; M. Sato; H. Shirakawa; M. Tanaka

doi:10.4028/www.scientific.net/SSP.195.195

Paper Titles

Influence of Dissolved CO₂ on Bubble Activity in Pulsed Acoustic Fields
p.177

Evaluation of Very Dilute Alkaline Solutions for Wafer Cleaning with Megasonic Irradiation
p.181

Removal of Fine Particle Using SAPS Technology and Functional Water
p.185

Non Destructive Nanoparticle Removal from Submicron Structures Using Megasonic Cleaning
p.191

Physical Cleaning Enhancement Using Advanced Spray with Uniform Droplet Control
p.195

CO₂-Dissolved Water Cleans for 2xnm-Node Silicon Devices in a Single Wafer Megasonic System
p.198

Direct vs. Indirect Megasonic Tank Cleaning Systems; Uniformity, Cleaning Efficiency and Cost of Ownership
p.201

Development of a Near-Field Megasonic Cleaning System for Nano-Particle Removal
p.205

Megasonic Cleaning to Remove Nano-Dimensional Contaminants from Wafer Surfaces: An Analytical Study
p.209

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Physical Cleaning Enhancement Using Advanced Spray with Uniform Droplet Control

Abstract:

In semiconductor device manufacturing, single wafer processors are widely used in not only BEOL process but also in FEOL process for 2X devices to improve the cleaning efficiency and get the higher productivity. Because the scaled down devices require the minimum substrate loss in the cleaning steps, the physical force by a dual fluid spray is still the main position to improve the cleaning efficiency at the moment comparing with chemical effects as the dissolution of contaminants and/or the lift off of particles. Sato, et al., reported that the relationship between particle removal and droplet characteristics linked to the droplet energy density E_d as following equation [. The kinetic energy E_k of droplet is calculated from droplet diameter d and velocity v, as shown in Equation 1.