Smoothening by Self-Diffusion of Silicon during Annealing in a Rapid Processing Chamber

Pablo Eduardo Acosta-Alba; Christophe Gourdel; Oleg Kononchuk

doi:10.4028/www.scientific.net/SSP.205-206.364

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Characterization of Electrical Contacts on Silicon (100) after Ablation and Sulfur Doping by Femtosecond Laser Pulses
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Smoothening by Self-Diffusion of Silicon during Annealing in a Rapid Processing Chamber
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HomeSolid State PhenomenaSolid State Phenomena Vols. 205-206Smoothening by Self-Diffusion of Silicon during...

Smoothening by Self-Diffusion of Silicon during Annealing in a Rapid Processing Chamber

Abstract:

Atomic-scale mechanisms of thermal activated self-diffusion on crystal surfaces are investigated through AFM images. Surface evolution is studied by means of the Power Spectral Density (PSD) function over a large spatial bandwidth. We propose a parametric model based on the Mullins-Herring (MH) diffusion equation by adding two stochastic terms. Then, surface evolution during high temperature annealing in reducing ambient can be predicted. Very good agreement between experimental and theoretical roughness and diffusion parameters was observed. Origin and evolution of the stochastic terms, describing conservative and non-conservative noises, are discussed.

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Periodical:

Solid State Phenomena (Volumes 205-206)

Pages:

364-369

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.205-206.364

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Online since:

October 2013

Authors:

Pablo Eduardo Acosta-Alba, Christophe Gourdel, Oleg Kononchuk

Keywords:

Power Spectral Density, Roughness, Self-Diffusion, Thermal Smoothening

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