Kinetics of Hydrogen Motion via Dislocation Network in Hydrophilically Direct Bonded Silicon Wafers

A.S. Loshachenko; Oleg F. Vyvenko; Oleg Kononchuk

doi:10.4028/www.scientific.net/SSP.205-206.341

Paper Titles

Multiple Proton Implantations into Silicon: A Combined EBIC and SRP Study
p.311

Positron Probing of Vacancy Volume of Thermally Stable Deep Donors Produced with 15 MeV Protons in n-FZ-Si:P Crystals
p.317

Radiation Damage of Carrier Lifetime and Conductivity in Sn and Pb Doped n-Si
p.323

Effect of Hydrogen for Preservation of Reconstructed Surfaces
p.331

Kinetics of Hydrogen Motion via Dislocation Network in Hydrophilically Direct Bonded Silicon Wafers
p.341

Electric Field Effect Surface Passivation for Silicon Solar Cells
p.346

Effect of Ultrasonic Treatment on the Defect Structure of the Si-SiO₂ System
p.352

Characterization of Electrical Contacts on Silicon (100) after Ablation and Sulfur Doping by Femtosecond Laser Pulses
p.358

Smoothening by Self-Diffusion of Silicon during Annealing in a Rapid Processing Chamber
p.364

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Kinetics of Hydrogen Motion via Dislocation Network in Hydrophilically Direct Bonded Silicon Wafers

Abstract:

The kinetics of hydrogen penetration through dislocation networks produced by silicon wafer bonding are investigated by means of reverse bias annealing (RBA) procedure. By using the combination of capacitance-voltage (CV) profiling of net-acceptor concentration and deep level transient spectroscopy (DLTS) the total concentration of H introduced in the samples during wet–chemical etching at room temperature was defined. Two processes with the different time constants τ₁ and τ₂ was found for the bonded sample. The slow process τ₁ with an activation energy of (1.25±0.13) eV was analogous to that in the reference sample and corresponded to the dissociation of boron-hydrogen pairs. The fast process τ₂ was found to exhibit a lower activation energy of (0.87±0.25) eV and was identified as the release of hydrogen bound at screw dislocations by their elastic strains.