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Paper Titles
Polycrystalline Silicon Gettering Layers with Controlled Residual Stress
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Impact of Electric Field on Thermoemission of Carriers from Shallow Dislocation-Related Electronic States
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Multiple Proton Implantations into Silicon: A Combined EBIC and SRP Study

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Abstract:

Protons with energies of 1 MeV and 2.5 MeV were implanted into a p-doped silicon wafer and then the wafer was annealed at 350 °C for one hour. This resulted in two n-doped layers in the otherwise p-doped sample. The carrier concentration was measured using spreading resistance profiling while the positions of the four pn-junctions were measured using electron beam induced current measurements. The carrier concentration is not limited by the available hydrogen but by the concentration of suitable radiation induced defects.

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Periodical:

Solid State Phenomena (Volumes 205-206)

Pages:

311-316

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.205-206.311

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Online since:

October 2013

Authors:

Stefan Kirnstötter, Martin Faccinelli, Moriz Jelinek, Werner Schustereder, Johannes G. Laven, Hans Joachim Schulze, Peter Hadley

Keywords:

Defects in Semiconductors, Diffusion, Doping Type, EBIC, Hydrogen/Proton Implantation, Spreading Resistance Profiling (SRP)

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