Radiation Damage of Carrier Lifetime and Conductivity in Sn and Pb Doped n-Si

Abstract:

The impact of Sn on the degradation of the nonequilibrium charge carriers lifetime (τ) and the change of free electrons concentration (n) in γ- or electron irradiated Czochralski (Cz) n-Si has been studied. It is shown that in some cases the low-resistivity Sn doped n-Si (n-Si:Sn) can be considered as a material with enhancement radiation tolerance. In this material the lifetime damage factor (k_τ) is in several times smaller compared to undoped n-Si while the conductivity damage factor (k_n) is close in both materials. We also compared the impact of Sn, Pb and Sn+Pb. It is found that the radiation damage of the carrier lifetime and the conductivity in n-Si:Pb is slightly smaller than in undoped n-Si and in n-Si:Sn+Pb is the same as in n-Si:Sn.

• Periodical: Solid State Phenomena (Volumes 205-206)
• Pages: 323-328
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.205-206.323
• Online since: October 2013
• Authors: Mykola Kras'ko, Anatolii Kraitchinskii, Andrii Kolosiuk, Vasyl Voitovych, Roman Rudenko, Vasyl Povarchuk
• Keywords: Isovalent Impurities, Radiation Damage, Radiation Defects, Silicon

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