Impact of Electric Field on Thermoemission of Carriers from Shallow Dislocation-Related Electronic States

M. Trushin; Oleg F. Vyvenko

doi:10.4028/www.scientific.net/SSP.205-206.299

Paper Titles

Proximity Gettering of Slow Diffuser Contaminants
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Influence of Cu Concentration on the Getter Efficiency of Dislocations and Oxygen Precipitates in Silicon Wafers
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Polycrystalline Silicon Gettering Layers with Controlled Residual Stress
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Charge Carrier Transport along Grain Boundaries in Silicon
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Impact of Electric Field on Thermoemission of Carriers from Shallow Dislocation-Related Electronic States
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Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon
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Multiple Proton Implantations into Silicon: A Combined EBIC and SRP Study
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Positron Probing of Vacancy Volume of Thermally Stable Deep Donors Produced with 15 MeV Protons in n-FZ-Si:P Crystals
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Radiation Damage of Carrier Lifetime and Conductivity in Sn and Pb Doped n-Si
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HomeSolid State PhenomenaSolid State Phenomena Vols. 205-206Impact of Electric Field on Thermoemission of...

Impact of Electric Field on Thermoemission of Carriers from Shallow Dislocation-Related Electronic States

Abstract:

Shallow dislocation-related electronic states near the bottom of the conduction band in n-type Si bonded sample have been investigated with deep-level transient spectroscopy (DLTS), isothermal transient spectroscopy (ITS) and energy-resolved DLTS. The effect of thermoemission (TE) enhancement in external electric field was found and the dependence of the TE activation energy reduction as a function of the filling grade was obtained for these states. A new model of dislocation-strain-related Poole-Frenkel effect that accounts for the own electric field of internal charge of dislocation line is suggested and compared with the experimental data.