[1]
K. Graff, Metal Impurities in Silicon-Device Fabrication, Springer, Berlin, (2000).
Google Scholar
[2]
A. Rohatgi, J. R. Davis, R. H. Hopkins, P. G. McMullin, A study of grown-in impurities in silicon by deep-level transient spectroscopy, Solid-State Electronics 26 (1983) 1039—1051.
DOI: 10.1016/0038-1101(83)90001-1
Google Scholar
[3]
D. Codegoni, M.L. Polignano, D. Caputo, A. Riva, E. Blot, D. Coulon, P. Maillot, N. Pic, Molybdenum Contamination in Silicon: Detection and Impact on Device Performances, Solid State Phenomena 145-146 (2009) 123—126.
DOI: 10.4028/www.scientific.net/ssp.145-146.123
Google Scholar
[4]
D. Codegoni, M.L. Polignano, V. Soncini, C. Bresolin, Molybdenum Contamination in Indium and Boron Implantation Processes, Electrochemical Society Transactions 10 (2007). 85—94.
DOI: 10.1149/1.2773979
Google Scholar
[5]
M.L. Polignano, G.F. Cerofolini, H. Bender and C. Claeys, Gettering mechanisms in silicon, J. Appl. Phys. 64 (1988) 869—876.
DOI: 10.1063/1.341939
Google Scholar
[6]
J. L. Benton,D. C. Jacobson, B. Jackson, J. A. Johnson, T. Boone, D. J. Eaglesham, F. A. Stevie, and J. Becerro, Behavior of Molybdenum in Silicon Evaluated for Integrated Circuit Processing", Journal of the Electrochemical Society 146 (1999).
DOI: 10.1149/1.1391868
Google Scholar
[7]
W. H. Lemke, Über die chemische Natur von Rekombinationszentren in Si-Leistungs-bauelementen, Phys. Status Solidi A 76 (1983) K193—K196.
DOI: 10.1002/pssa.2210760265
Google Scholar
[8]
M.L. Polignano, F. Cazzaniga, A. Sabbadini, F. Zanderigo, F. Priolo, Metal contamination monitoring and getterin, Mat. Sci. in Semiconductor Processing 1 (1998) 119—130.
DOI: 10.1016/s1369-8001(98)00015-8
Google Scholar
[9]
A. Haarahiltunen, H. Väinölä, O. Anttila, M. Yli-Koski, and J. Sinkkonen, Experimental and theoretical study of heterogeneous iron precipitation in silicon, Journal of Applied Physics 101, (2007) 043507—043512.
DOI: 10.1063/1.2472271
Google Scholar