Deep Energy Levels of Platinum-Hydrogen Complexes in Silicon

Elie Badr; Peter Pichler; Gerhard Schmidt

doi:10.4028/www.scientific.net/SSP.205-206.260

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HomeSolid State PhenomenaSolid State Phenomena Vols. 205-206Deep Energy Levels of Platinum-Hydrogen Complexes...

Deep Energy Levels of Platinum-Hydrogen Complexes in Silicon

Abstract:

Hydrogen incorporated into the samples by wet chemical etching interacts with platinum and forms several energy levels in the silicon forbidden band gap. Deep-level transient spectroscopy (DLTS) on Schottky diodes reveals several platinum-hydrogen related levels in p- and n-type silicon. In the n-type silicon, two new platinum-hydrogen related levels at 0.28 and 0.41 eV below the conduction band are reported. Annealing at 377 °C results in the dissociation of their corresponding platinum-hydrogen complexes.

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Periodical:

Solid State Phenomena (Volumes 205-206)

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260-264

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.205-206.260

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Online since:

October 2013

Authors:

Elie Badr, Peter Pichler, Gerhard Schmidt

Keywords:

DLTS, Hydrogen, Platinum, Silicon

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