Metastable CuVO* Complex in Silicon

Nikolai Yarykin; Jörg Weber

doi:10.4028/www.scientific.net/SSP.205-206.255

Paper Titles

Infrared Defect Dynamics of Irradiation Induced Complexes in CZ Silicon - C-Rich Case
p.228

Calibration of IR Absorbance in Highly Nitrogen Doped Silicon
p.234

Dislocation Motions in Czochralski Silicon Wafers Treated by Rapid Thermal Processing under Different Atmospheres
p.238

New Results on the Electrical Activity of 3d-Transition Metal Impurities in Silicon
p.245

Metastable CuVO* Complex in Silicon
p.255

Deep Energy Levels of Platinum-Hydrogen Complexes in Silicon
p.260

Association of FeB Pairs under Illumination
p.265

Proximity Gettering of Slow Diffuser Contaminants
p.271

Influence of Cu Concentration on the Getter Efficiency of Dislocations and Oxygen Precipitates in Silicon Wafers
p.278

HomeSolid State PhenomenaSolid State Phenomena Vols. 205-206Metastable CuVO* Complex in Silicon

Metastable CuVO* Complex in Silicon

Abstract:

The reaction of the mobile interstitial Cu_i atom and the A-center (vacancy-oxygen complex) was recently reported to produce at 350 K the rather stable CuVO complex. Chemomechanical polishing in a copper-contaminated slurry allowed to lower the copper in-diffusion temperature down to 295K. The development of the CuVO complex is shown to proceed via formation of the metastable precursor (CuVO*) which introduces two deep levels in the lower half of the band gap. The CuVO* defect is unstable at room temperature and transforms completely into the CuVO complex by a 30 min anneal at 350 K. The proposed structure for the CuVO* complex of a Cu_i atom trapped nearby the A-center is supported by recent ab-initio calculations.

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Periodical:

Solid State Phenomena (Volumes 205-206)

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255-259

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https://doi.org/10.4028/www.scientific.net/SSP.205-206.255

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Online since:

October 2013

Authors:

Nikolai Yarykin, Jörg Weber

Keywords:

Copper Impurity, Deep Levels, Radiation Defects, Silicon

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References

[1] B. G. Svensson, M. O. Aboelfotoh, and J. L. Lindström: Phys. Rev. Lett. Vol. 66 (1991), p.3028.

Google Scholar

[2] S. Tamulevicius, B. G. Svensson, M. O. Aboelfotoh, and A. Hallén: J. Appl. Phys. Vol. 71 (1992), p.4212.

Google Scholar

[3] M. O. Aboelfotoh and B. G. Svensson: Phys. Rev. B Vol. 52 (1995), p.2522.

Google Scholar

[4] V. P. Markevich, A. R. Peaker, I. F. Medvedeva, V. Gusakov, L. I. Murin, and B. G. Svensson: Solid State Phenomena Vol. 131-133 (2008), p.363.

DOI: 10.4028/www.scientific.net/ssp.131-133.363

Google Scholar

[5] N. Yarykin and J. Weber: Semiconductors Vol. 44 (2010), p.983.

Google Scholar

[6] N. Yarykin and J. Weber: Phys. Rev. B Vol. 83 (2011), 125207.

Google Scholar

[7] N. Yarykin and J. Weber: Solid State Phenomena Vol. 178-179 (2011), p.154.

Google Scholar

[8] T. Zundel, J. Weber, B. Benson, P. O. Hahn, A. Schnegg, and H. Prigge: Appl. Phys. Lett. Vol. 53 (1988), p.1426.

DOI: 10.1063/1.99962

Google Scholar

[9] L. Dobaczewski, A. R. Peaker, and K. Bonde Nielsen: J. Appl. Phys. Vol. 96 (2004), p.4689.

Google Scholar

[10] L. I. Khirunenko, Y. V. Pomozov, N. A. Tripachko, M. G. Sosnin, A. Duvanskii, L. I. Murin, J. L. Lindström, S. B. Lastovskii, L. F. Makarenko, V. P. Markevich, and A. R. Peaker: Solid State Phenom. Vol. 108-109 (2005), p.261.

DOI: 10.4028/www.scientific.net/ssp.108-109.261

Google Scholar

[11] D. West, S. K. Estreicher, S. Knack, and J. Weber: Phys. Rev. B Vol. 68 (2003), 035210.

Google Scholar

[12] V. E. Gusakov: in Proc. of Int. Workshop on Radiation Physics of Solid State, edited by G. G. Bondarenko (Moscow, 2008), p.642.

Google Scholar