Infrared Defect Dynamics of Irradiation Induced Complexes in CZ Silicon - C-Rich Case

Abstract:

Irradiation induced complexes of C-rich case in silicon crystal were examined by the highly sensitive and accurate infrared absorption spectroscopy. Low impurity concentration and high quality crystal was used and low dose was employed to make the reaction simple. Almost all possible absorption lines were revealed and their absorbance determined. The conversion coefficient from absorbance to the complex concentration was estimated by the plausible assumptions. The reaction was discussed in terms of concentration rather than absorbance. Intra-group reaction, chain reaction of successive addition of oxygen or self-interstitial, reaction yield and competition between the parallel reactions were described.

• Periodical: Solid State Phenomena (Volumes 205-206)
• Pages: 228-233
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.205-206.228
• Online since: October 2013
• Authors: N. Inoue, Y. Goto, T. Sugiyama, H. Seki, K. Watanabe, Y. Kawamura
• Keywords: Impurity, Infrared, Irradiation, Point Defect, Silicon

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