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HomeSolid State PhenomenaSolid State Phenomena Vols. 205-206Isotope-Dependent Phonon Trapping at Defects in...

Isotope-Dependent Phonon Trapping at Defects in Semiconductors

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Abstract:

Unexpectedly large isotope effects have been reported for the vibrational lifetimes of the H-C stretch mode of the CH₂^* defect in Si and the asymmetric stretch of interstitial O in Si as well. First-principles theory can explain these effects. The results imply that defects trap phonons for lengths of time that depend on the defect and sometimes on its isotopic composition. Some consequences of phonon trapping are discussed.

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Periodical:

Solid State Phenomena (Volumes 205-206)

Pages:

209-212

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.205-206.209

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Online since:

October 2013

Authors:

Stefan K. Estreicher, T. Michael Gibbons, Michael Stavola

Keywords:

Isotope Effects, Phonon Trapping, Silicon

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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