Formation of Single and Double Donor States of Trivacancy-Oxygen Complexes in P-Type Silicon

Naveengoud Ganagona; Lasse Vines; Edouard V. Monakhov; Bengt Gunnar Svensson

doi:10.4028/www.scientific.net/SSP.205-206.213

Paper Titles

The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon
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Monoisotopic ²⁸Si in Spin Resonance Spectroscopy of Electrons Localized on Shallow Donors
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Light-Element Impurities and their Reactions in Multicrystalline Si
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Isotope-Dependent Phonon Trapping at Defects in Semiconductors
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Formation of Single and Double Donor States of Trivacancy-Oxygen Complexes in P-Type Silicon
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Interactions of Self-Interstitials with Interstitial Carbon-Interstitial Oxygen Center in Irradiated Silicon: An Infrared Absorption Study
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PL and DLTS Analysis of Carbon-Related Centers in Irradiated P-Type Cz-Si
p.224

Infrared Defect Dynamics of Irradiation Induced Complexes in CZ Silicon - C-Rich Case
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Calibration of IR Absorbance in Highly Nitrogen Doped Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 205-206Formation of Single and Double Donor States of...

Formation of Single and Double Donor States of Trivacancy-Oxygen Complexes in P-Type Silicon

Abstract:

Deep level transient spectroscopy (DLTS) has been applied to study the formation of trivacancy-oxygen complexes in Si. Samples of p-type Czochralski grown (Cz) silicon, with a boron doping concentration of ~1x10¹⁵ cm^-3, have been irradiated at room temperature (RT) with 1.8 MeV protons to a dose of 5×10¹²cm^-2. Two new energy levels at E_v+0.24 eV and E_v+0.11 eV (E_v denotes the valence band edge) emerge when the divacancy (V₂) to divacancy-oxygen (V₂O) transition takes place during post-irradiation annealing. The concentration is ~30% relative to V₂ (or V₂O) and further, the two new levels exhibit an almost one-to-one correlation in strength. The present results strongly support that both levels are related to the same defect with a possible identification as single and double donor states of V₃O.

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Periodical:

Solid State Phenomena (Volumes 205-206)

Pages:

213-217

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.205-206.213

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Online since:

October 2013

Authors:

Naveengoud Ganagona, Lasse Vines, Edouard V. Monakhov, Bengt Gunnar Svensson

Keywords:

DLTS, Silicon, Trivacancy, Trivacancy-Oxygen

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