The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon

Abstract:

The data obtained recently from combined deep-level-transient spectroscopy (DLTS), local vibrational mode (LVM) spectroscopy and ab-initio modeling studies on structure, electronic properties, local vibrational modes, reconfiguration and diffusion paths and barriers for trivacancy (V₃) and trivacancy-oxygen (V₃O) defects in silicon are summarized. New experimental results on the introduction rates of the divacancy (V₂) and trivacancy upon 4 MeV electron irradiation and on the transformation of V₃ from the fourfold coordinated configuration to the (110) planar one upon minority carrier injection are reported. Possible mechanisms of the transformation are considered and discussed.

• Periodical: Solid State Phenomena (Volumes 205-206)
• Pages: 181-190
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.205-206.181
• Online since: October 2013
• Authors: Vladimir P. Markevich, Anthony R. Peaker, Bruce Hamilton, S.B. Lastovskii, Leonid I. Murin, Jose Coutinho, Mark J. Rayson, Patrick R. Briddon, Bengt Gunnar Svensson
• Keywords: Ab Initio Modeling, Energy Levels, Silicon, Trivacancy, Trivacancy-Oxygen

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