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Theoretical Study of the Impact of Stress on the Behavior of Intrinsic Point Defects in Large-Diameter Defect-Free Si Crystals

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Abstract:

For the development of the crystal pulling process for 450 mm-diameter defect-free Si crystals, the impact of thermal stress on intrinsic point defect behavior during crystal growth is studied using extensive density functional theory calculations. The impact of thermal stress on the so-called Voronkov criterion and on void formation is clarified and compared with published experimental results.

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Periodical:

Solid State Phenomena (Volumes 205-206)

Pages:

163-168

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.205-206.163

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Online since:

October 2013

Authors:

Koji Sueoka, Eiji Kamiyama, Jan Vanhellemont

Keywords:

Defect-Free Si Crystal, Density Functional Study, Point Defect, Thermal Stress, Void

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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