Properties of Point Defects in Silicon: New Results after a Long-Time Debate

Abstract:

The contributions of vacancies and self-interstitials to silicon (Si) self-diffusion are a matter of debate since many years. These native defects are involved in dopant diffusion and the formation of defect clusters and thus influence many processes that take place during Si single crystal growth and the fabrication of silicon based electronic devices. Considering their relevance it is remarkable that present data about the properties of native point defects in Si are still limited and controversy. This work reports recent results on the properties of native point defects in silicon deduced from self-diffusion experiments below 850°C. The temperature dependence of silicon self-diffusion is accurately described by contributions due to vacancies and self-interstitials assuming temperature dependent vacancy properties. The concept of vacancies whose thermodynamic properties change with temperature solves the inconsistency between self-and dopant diffusion in Si but further experiments are required to verify this concept and to prove its relevance for other material systems.

• Periodical: Solid State Phenomena (Volumes 205-206)
• Pages: 151-156
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.205-206.151
• Online since: October 2013
• Authors: Hartmut Bracht, René Kube, Erwin Hüger, Harald Schmidt
• Keywords: Germanium, Self-Diffusion, Self-Interstitial, Silicon, Vacancy

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