A Comparison of EBIC, LBIC and XBIC Methods as Tools for Multicrystalline Si Characterization

Abstract:

A comparative study of multicrystalline Si based solar cells and plastically deformed single crystalline Si by the EBIC, LBIC and XBIC methods as well as a computer simulation were carried out. The XBIC measurements were realized on a laboratory X-ray source. Simulations of LBIC and XBIC contrast values for grain boundaries, dislocations and spherical precipitates were carried out for different diffusion length and beam diameter values. It is shown by a computer simulation that the LBIC and XBIC contrast of two-dimensional defects in the crystals with a large enough diffusion length can be a few times higher than that in the EBIC mode, i.e. these methods in recent multicrystalline Si structures allow to reveal grain boundaries with the lower recombination strength. The contrast of dislocations perpendicular to the surface can be comparable in all three methods. The XBIC and LBIC contrast of precipitates usually is essentially smaller than that in the EBIC mode and could approach it in the structures with the small diffusion length only. Experimental data confirming the results of simulations are presented.

• Periodical: Solid State Phenomena (Volumes 205-206)
• Pages: 142-147
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.205-206.142
• Online since: October 2013
• Authors: Valeri I. Orlov, Olga V. Feklisova, Eugene B. Yakimov
• Keywords: Dislocation, EBIC, Grain Boundary, LBIC, Precipitate, Silicon, XBIC

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