Fast and Slow Vacancies in Silicon

Abstract:

Vacancies (and probably also self-interstitials) in silicon appear to exist in several forms (atomic configurations) some of them being fast diffusers and other slow diffusers. The data on enhanced self-diffusivity under proton irradiation, on vacancy and oxide precipitate profiles installed by Rapid Thermal Annealing, and on the self-diffusivity under equilibrium conditions suggest that there are at least two kinds of vacancy: 1) V_w - a fast-diffusing localized vacancy manifested in electron irradiated samples (Watkins vacancy), 2) V_s - a slow-diffusing extended vacancy manifested under hot proton irradiation. In RTA experiments, these two species behave as one equilibrated subsystem of a moderate effective diffusivity intermediate between those of V_w and V_s. There is also strong evidence in favor of a third kind of vacancy: V_f a fast extended species, which controls the grown-in voids in silicon crystals.

• Periodical: Solid State Phenomena (Volumes 205-206)
• Pages: 157-162
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.205-206.157
• Online since: October 2013
• Authors: Vladimir V. Voronkov, Robert Falster
• Keywords: Diffusion, Self-Interstitial, Silicon, Vacancy

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