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HomeSolid State PhenomenaSolid State Phenomena Vols. 205-206Light-Element Impurities and their Reactions in...

Light-Element Impurities and their Reactions in Multicrystalline Si

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Abstract:

Vibrational spectroscopy has been used to investigate the properties of hydrogen in multicrystalline Si (mc-Si) and its interactions with carbon impurities that can be present with high concentration. The properties of point defects containing N and O have been investigated by way of their vibrational properties and their far-infrared electronic transitions.

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Periodical:

Solid State Phenomena (Volumes 205-206)

Pages:

201-208

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.205-206.201

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Online since:

October 2013

Authors:

Michael Stavola, Stefan K. Estreicher, Mike Seacrist

Keywords:

IR-Spectroscopy, Light Element Impurities, Multicrystalline Silicon

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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