PL and DLTS Analysis of Carbon-Related Centers in Irradiated P-Type Cz-Si

Bahman Raeissi; Naveengoud Ganagona; Augustinas Galeckas; Edouard V. Monakhov; Bengt Gunnar Svensson

doi:10.4028/www.scientific.net/SSP.205-206.224

Paper Titles

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HomeSolid State PhenomenaSolid State Phenomena Vols. 205-206PL and DLTS Analysis of Carbon-Related Centers in...

PL and DLTS Analysis of Carbon-Related Centers in Irradiated P-Type Cz-Si

Abstract:

Photoluminescence (PL) and deep level transient spectroscopy (DLTS) have been used to investigate carbon related defects in p–type Cz–Si induced by proton irradiation. The interstitial carbon–interstitial oxygen (C_iO_i) level in DLTS and the corresponding C–line (789.5 meV) in PL spectra are detected in as–irradiated samples. Formations of the so–called P–line at 767 meV in PL and a new defect level at about 0.39 eV above the valence band edge, E_v, in the DLTS spectra are observed in the annealed samples. The evolution of the C_iO_i and E_v+0.39 eV levels in DLTS and also the C– and P– lines in PL upon post–irradiation heat–treatment is investigated, showing that the intensity of the C_iO_i level decreases with heat–treatment, which is consistent with the PL data for the C–line. The intensity of the E_v+0.39 eV level is enhanced and then saturates with annealing duration. We tentatively assign this level to the interstitial carbon–oxygen dimer (C_iO_2i).

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Periodical:

Solid State Phenomena (Volumes 205-206)

Pages:

224-227

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.205-206.224

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Online since:

October 2013

Authors:

Bahman Raeissi, Naveengoud Ganagona, Augustinas Galeckas, Edouard V. Monakhov, Bengt Gunnar Svensson

Keywords:

C Center, DLTS, P Center, Photoluminescence (PL)

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References

[1] G. Davies and R.C. Newman, Carbon in Monocrystalline Silicon, in: Handbook on Semiconductors, Vol. 3, edited by S. Mahajan, North–Holland: Elsevier, Amsterdam, (1994).

Google Scholar

[2] L.C. Kimerling, M.T. Asom, J.L. Benton, P.J. Drevinsky, and C. E. Caefer, Mater. Sci. Forum 38–41(1989) 141–150.

DOI: 10.4028/www.scientific.net/msf.38-41.141

Google Scholar

[3] B.G. Svensson, K. -H. Rydén, and B.M.S. Lewerentz, J. Appl. Phys. 66(1989) 1699–1704.

Google Scholar

[4] N. Ganagona, B. Raeissi, L. Vines, E.V. Monakhov, B.G. Svensson, Physica Status Solidi (C) 9(2012) 2009–(2012).

DOI: 10.1002/pssc.201200217

Google Scholar

[5] W. Kürnen, R. Sauer, A. Dörnen, and K. Thonke, Phys. Rev. B 39(1989) 13327–13337.

Google Scholar

[6] I.A. Buyanova, B. Monemar, J.L. Lindström, T. Hallberg, L.I. Murin, and V.P. Markevich, Mater. Sci. Eng. B 72(2000) 146–149.

DOI: 10.1016/s0921-5107(99)00491-2

Google Scholar

[7] J.L. Lindström, L.I. Murin, T. Hallberg, V.P. Markevich, B.G. Svensson, M. Kleverman, and J. Hermansson, Nucl. Instrum. Methods Phys. Res. B 186(2002) 121–125.

Google Scholar

[8] J. L. Lindström, T. Hallberg, D. Åberg, B. G. Svensson, L. I. Murin, and V. P. Markevich, Mat. Sci. Forum 258–263(1997) 367–372.

DOI: 10.4028/www.scientific.net/msf.258-263.367

Google Scholar

[9] C. P. Ewels, R. Jones, and S. Öberg, in: Early Stages of Oxygen Precipitation in Silicon, edited by R. Jones (Kluwer Academic Press, Ser. 3, 1996), p.17.

DOI: 10.1007/978-94-009-0355-5_8

Google Scholar