Calibration of IR Absorbance in Highly Nitrogen Doped Silicon

Kevin Lauer; Christian Möller; Rudolf Porytskyy; Hartmuth Strutzberg; Dirk Schulze; Michael Schley; Friedrich Schaaff

doi:10.4028/www.scientific.net/SSP.205-206.234

Paper Titles

Formation of Single and Double Donor States of Trivacancy-Oxygen Complexes in P-Type Silicon
p.213

Interactions of Self-Interstitials with Interstitial Carbon-Interstitial Oxygen Center in Irradiated Silicon: An Infrared Absorption Study
p.218

PL and DLTS Analysis of Carbon-Related Centers in Irradiated P-Type Cz-Si
p.224

Infrared Defect Dynamics of Irradiation Induced Complexes in CZ Silicon - C-Rich Case
p.228

Calibration of IR Absorbance in Highly Nitrogen Doped Silicon
p.234

Dislocation Motions in Czochralski Silicon Wafers Treated by Rapid Thermal Processing under Different Atmospheres
p.238

New Results on the Electrical Activity of 3d-Transition Metal Impurities in Silicon
p.245

Metastable CuVO* Complex in Silicon
p.255

Deep Energy Levels of Platinum-Hydrogen Complexes in Silicon
p.260

HomeSolid State PhenomenaSolid State Phenomena Vols. 205-206Calibration of IR Absorbance in Highly Nitrogen...

Calibration of IR Absorbance in Highly Nitrogen Doped Silicon

Abstract:

Infrared absorption spectra of highly nitrogen doped multicrystalline float zone silicon are reported. By measuring the nitrogen content in silicon using SIMS, a calibration function of the IR absorption coefficient at 963 cm^-1 (T = 300 K) and the nitrogen concentration is deduced: c_N = (1.29 ± 0.05)×10¹⁷cm² α₉₆₃. The calibration factor is 30 % less than the calibration factor reported by Y. Itoh et al. [Appl. Phys. Lett. 47 (1985) 488].