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HomeSolid State PhenomenaSolid State Phenomena Vols. 205-206Analysis of Inhomogeneous Dislocation Distribution...

Analysis of Inhomogeneous Dislocation Distribution in Multicrystalline Si

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Abstract:

Grain boundaries and dislocations are major crystallographic defects in multicrystalline Si materials for solar cells. Heavily dislocated grains are detrimental to the photovoltaic performance. This paper attempts to clarify the origin of inhomogeneous defect distribution in multicrystalline Si. The impacts of crystal orientation and grain boundary were investigated. The crystal orientation gives an important geometrical effect in the possibility of initiating slip in a grain when subjected to stress. The presence of grain boundary can also affect dislocation distribution depending on boundary character.

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Periodical:

Solid State Phenomena (Volumes 205-206)

Pages:

77-82

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.205-206.77

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Cite this paper

Online since:

October 2013

Authors:

Jun Chen, Ronit R. Prakash, Jian Yong Li, Karolin Jiptner, Yoshiji Miyamura, Hirofumi Harada, Atsushi Ogura, Takashi Sekiguchi

Keywords:

Dislocation, Grain Boundary, mc-Si

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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