Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers

Ali Ghaderi; Semih Senkader

doi:10.4028/www.scientific.net/SSP.205-206.65

Paper Titles

Precipitation of Interstitial Iron in Multicrystalline Silicon
p.34

Direct Observation of Carrier Trapping Processes on Fe Impurities in mc-Si Solar Cells
p.40

On the Trade-Off between Industrially Feasible Silicon Surface Preconditioning Prior to Interface Passivation and Iron Contaminant Removal Effectiveness
p.47

Defect Generation and Propagation in Mc-Si Ingots: Influence on the Performance of Solar Cells
p.55

Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers
p.65

The Impact of Dislocation Structure on Impurity Decoration of Dislocation Clusters in Multicrystalline Silicon
p.71

Analysis of Inhomogeneous Dislocation Distribution in Multicrystalline Si
p.77

Properties of Strong Luminescence at 0.93 eV in Solar Grade Silicon
p.83

10 cm Diameter Mono Cast Si Growth and its Characterization
p.89

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Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers

Abstract:

A major performance limiting factor of multicrystalline silicon wafers is structural defects, mainly dislocations, reducing solar cell efficiency. Dislocations are formed during crystallisation process. Characterization of dislocation-content is necessary both to optimise the crystallisation and to eliminate bad wafers before cell processing. We developed two techniques to characterise dislocations: conventional etch-pit counting modified for full size wafers using a new etch-recipe and a novel etch-pit counting algorithm. Secondly we developed a technique to estimate the dislocation content directly from photoluminescence images of as-cut wafers.