Fluid Flow and Defect Density Considerations when Drying Bumped Wafers Using Spin and Surface Tension Gradient Methods

Daniel L. Goodman; Dustin Rabideau; Mani Sobhian

doi:10.4028/www.scientific.net/SSP.219.161

Paper Titles

Novel Slurry Injection System for Improved Slurry Flow and Reduced Defects in CMP
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Effect of Viscoelasticity of PVA Brush on Friction during Post-CMP Cleaning: A Guideline for Nodule Configuration
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Understanding the Formation of Circular Ring Defects in Post-CMP Cleaning
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Particle Measurement with a Liquid-Borne Particle Counter: Analytical Figures of Merit
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Fluid Flow and Defect Density Considerations when Drying Bumped Wafers Using Spin and Surface Tension Gradient Methods
p.161

Characterization of Cavitation in Ultrasonic or Megasonic Irradiated Gas Saturated Solutions Using a Hydrophone
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Detection of HO₂•/O₂•^- Radicals Formed in Aqueous Solutions Irradiated with Megasonic Waves Using a Cavitation Threshold (CT) Cell Set-Up
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Photo Lithography - Surface Preparation Interactions
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Study of Etchants’ Diffusion into a 248 nm Deep UV Photoresist during a Wet Etch
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Fluid Flow and Defect Density Considerations when Drying Bumped Wafers Using Spin and Surface Tension Gradient Methods

Abstract:

Spin rinse drying (SRD) and surface tension gradient drying (STG) are used to clean and dry wafers after wet processing. These methods are effective at removing surface fluid and fluid trapped by capillary forces in small (<1um) features. SRD and STG processes combine driven fluid flows with controlled evaporation of thin water films to leave a dry wafer with low defect density (i.e. a low number of physical particle process adders, or areas of haze or oxidation).

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Periodical:

Solid State Phenomena (Volume 219)

Pages:

161-164

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.219.161

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Online since:

September 2014

Authors:

Daniel L. Goodman*, Dustin Rabideau, Mani Sobhian

Keywords:

Advanced Packaging, Bumped Wafers, Copper Pillar, Defect Density, Microfluidic Channels, Resist Strip, SRD, Surface Tension Gradient, Wafer Drying

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