Study of Etchants’ Diffusion into a 248 nm Deep UV Photoresist during a Wet Etch

Abstract:

Chemical etching is still preferred to plasma etching in numerous integrated circuits manufacturing steps. Indeed, it enables a better surface smoothness control, which is critical to obtain sufficient carrier mobility. During these steps, photoresist patterns protect underlying materials from etching. It is therefore mandatory to: 1) guarantee photoresist adhesion and keep patterns from being etched away; and 2) prevent surface degradation from etchants penetration down to the photoresist / material interface. To avoid this latter phenomenon, it is therefore crucial to know if etchants penetrate into the photoresist, and at which diffusion rate.

• Periodical: Solid State Phenomena (Volume 219)
• Pages: 183-186
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.219.183
• Online since: September 2014
• Authors: Mathieu Foucaud*, Névine Rochat, Philippe Garnier, Erwine Pargon, Raluca Tiron
• Keywords: Diffusion in Polymers, Multiple Internal Reflection Infrared Spectroscopy, Photoresist Adhesion, Wet Etching, X-Ray Reflectometry

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