Quantitative Analysis of Trace Metallic Contamination on III-V Compound Semiconductor Surfaces

Koichiro Saga; Rikiichi Ohno

doi:10.4028/www.scientific.net/SSP.255.319

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Metal Removal Efficiency in High Aspect Ratio Structures
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Oxidation of Si Surfaces: Effect of Ambient Air and Water Treatments on Surface Charge and Interface State Density
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Surface Optimization of Random Pyramid Textured Silicon Substrates for Improving Heterojunction Solar Cells
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Quantitative Analysis of Trace Metallic Contamination on III-V Compound Semiconductor Surfaces

Abstract:

We studied the detection by TXRF of several transition metals on the surface of III-V materials for high mobility channel. It has been found that the lower limits of detection of some transition metals on the surface of III-V materials become higher than that on the Si surface because the sum peaks or Raman scattering peaks as well as the fluorescent X-ray main signals from the materials themselves partially cover those from the transition metals