The Effects of Hydrogen Flowrate during Pre-Annealing on Graphene Growth by Chemical Vapor Deposition Using Methanol as a Liquid Carbon Precursor

Abstract:

Studying an influence of several parameters on Chemical Vapor Deposition (CVD) used for graphene synthesis is crucial to optimizing the graphene quality to be Compatible with advanced devices. The effect of different hydrogen (H₂) flow-rates (0, 50, 100, 150, 200, 250, and 300 sccm) during the pre-annealing process on CVD grown graphene have been reported. This study revealed that hydrogen flow rates during annealing changed the surface roughness/smoothness of the copper substrates. For high hydrogen flow rates, the smoothing effect was increased. Furthermore, the annealed graphene samples emerged a deferent number of layers because of morphological surface changes. According to Raman D- to G-band intensity ratios (I_D/I_G), the graphene quality was influenced by the annealing hydrogen flowrate. The visible light transmittance values of the grown graphene samples confirmed a few number of layers (mono to seven-layer). Mostly, the samples which annealed under moderate hydrogen flow rates showed less defects intensities and higher crystallite sizes.

• Periodical: Solid State Phenomena (Volume 290)
• Pages: 107-112
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.290.107
• Online since: April 2019
• Authors: Raed Abdalrheem*, Fong Kwong Yam, Abdul Razak Ibrahim, Khi Poay Beh, Hwee San Lim, Yu Zhang Ng, Ammar A. Oglat, Mohd Zubir Mat Jafri, Faris Hidayat Ahmad Suhaimi
• Keywords: Annealing, Chemical Vapor Deposition (CVD), Copper, Graphene, RAMAN, Transparency

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