Study on Uniform Deposition on 300 mm Silicon Wafer with Sub-100 nm Sized Particles for Cleaning Application

Seungjae Lee; Seokjun Hong; Haerim Oh; Seung Ki Chae; Taesung Kim

doi:10.4028/www.scientific.net/SSP.314.209

Paper Titles

Visualization of Acoustic Waves and Cavitation in Ultrasonic Water Flow
p.186

Simulation of Rayleigh Bubble Growth near a No-Slip Rigid Wall
p.192

Effect of Surfactant in Gas Dissolved Cleaning Solutions on Acoustic Bubble Dynamics
p.197

Interaction between Free-Surface Oscillation and Bubble Translation in a Megasonic Cleaning Bath
p.202

Study on Uniform Deposition on 300 mm Silicon Wafer with Sub-100 nm Sized Particles for Cleaning Application
p.209

Ultrafine Particle Removal in the Wafer Cleaning Process Using an Aqueous Solution with a High Concentration of Dissolved O₃ and HF
p.214

Particle Removal in Ultrasonic Water Flow Cleaning Role of Cavitation Bubbles as Cleaning Agents
p.218

Scalable Particle Removal for sub-5 nm Nodes
p.222

The Effect of Thermal Aging on Nano-Particle Removal
p.228

HomeSolid State PhenomenaSolid State Phenomena Vol. 314Study on Uniform Deposition on 300 mm Silicon...

Study on Uniform Deposition on 300 mm Silicon Wafer with Sub-100 nm Sized Particles for Cleaning Application

Abstract:

A study for uniform deposition on whole area of wafer was conducted to help check the uniformity of cleaning technology between wafer center to edge. A new method of particle deposition was devised different from the conventional studies using the center nozzle and electric field. Our deposition chamber features wafer rotating method and deposition by the principle of convection and diffusion. In this study, we focused on the effect of wafer rotation speed and rotation number to particle deposition result. After setting the optimum condition, fine results with well deposited shape on whole area of the wafer and outstanding particle size uniformity of more than 70% were obtained. Although particle size shift phenomenon occurred in the measurement result using SP5 due to the intrinsic principle, SEM analysis demonstrated that particles with 60, 80 nm sized silica particles were well deposited on wafer. We believe the standard wafer made by our particle deposition system could be utilized and helpful for performance evaluation and development of wafer cleaning technologies.

You might also be interested in these eBooks

Ultra Clean Processing of Semiconductor Surfaces XV

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 314)

Pages:

209-213

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.314.209

Citation:

Cite this paper

Online since:

February 2021

Authors:

Seungjae Lee, Seokjun Hong, Haerim Oh, Seung Ki Chae, Taesung Kim*

Keywords:

Nanoparticles, Particle Deposition, Standard Particle, Standard Wafer, Wafer Cleaning

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] S.J. Yook, H. Fissan, T. Engelke, C. Asbach, T. van der Zwaag, J.H. Kim, F. Eschbach, J. Wang, D.Y.H. Pui: IEEE Trans. Semiconduct. Manuf, vol. 21(2008), No. 2.

DOI: 10.1109/tsm.2008.2000266

Google Scholar

[2] Y Cho, S Hong, S Lee, J Yang, S. K. Chae, T Kim: ECS Journal of Solid State Science and Technology, vol 8 (2020) pp.768-774.

Google Scholar

[3] H. R. Huff, R. K. Goodall, E. Williams: J. Electrochem. Soc., vol. 144(1997), No. 1.

Google Scholar

[4] H. S. Lee, S. K. Chae, Y. Ye, D. Y. H. Pui, and G. L.Wojcik: Aerosol Sci. Technol, vol. 14(1991), p.177–192.

Google Scholar

[5] B. Y. H. Liu, S. K. Chae, and G. N. Bae: J. Electrochem. Soc, vol. 140(1993), p.1403–1409.

Google Scholar