Temperature Gradient Control with an Air-Pocket Design for Growth of High Quality SiC Crystal

Seung Jun Lee; Su Ho Kim; Jung Woo Choi; Jong Hwi Park; Jung Doo Seo; Myung Ok Kyun; Jung Gyu Kim; Kap Ryeol Ku; Yeon Suk Jang; Won Jae Lee

doi:10.4028/p-38rj7g

Paper Titles

Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth
p.9

Improvement of the Conformational Stability of 150 mm 4H SiC Wafers
p.15

High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields
p.21

Effect of Sub-Surface Damage Layer Removal by Sublimation Etching of 4H-SiC Bulk Wafers on PL Imaging of Crystal Defect Visibility
p.29

Temperature Gradient Control with an Air-Pocket Design for Growth of High Quality SiC Crystal
p.37

4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering
p.43

Investigation of the Nucleation Process during the Initial Stage of PVT Growth of 4H-SiC
p.51

Al Implantation in Sic; Where Will the Ions Come to Rest?
p.57

Analysis of Transmission Performance for Fine Pitch Interconnect
p.67

HomeSolid State PhenomenaSolid State Phenomena Vol. 343Temperature Gradient Control with an Air-Pocket...

Temperature Gradient Control with an Air-Pocket Design for Growth of High Quality SiC Crystal

Abstract:

The hot-zone design using an air-pocket was adopted to produce uniform temperature gradient in horizontal direction. In order to investigate the change of temperature gradient toward horizontal direction with growth time, the front shape of SiC growing crystal was measured with different growth stages such as initial, growing and finished stage. While SiC ingot grown in conventional hot-zone design exhibited inhomogeneous growth front in the initial stage of growth and multi facet formation in final stage, which could result in increased defect density, a homogeneous temperature gradient and improved crystal quality was obtained in the modified hot-zone design. Based on the mapping measurement of FWHM (Full width at half maximum) value in X-ray rocking curve, the crystal quality of SiC crystals grown with the modified hot-zone design was observed to be definitely better than conventional design.

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