Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth

Johannes Steiner; Binh Duong Nguyen; Stefan Sandfeld; Peter J. Wellmann

doi:10.4028/p-eu98j0

Paper Titles

Preface

Epitaxial Growth of Boron Carbide on 4H-SiC
p.3

Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth
p.9

Improvement of the Conformational Stability of 150 mm 4H SiC Wafers
p.15

High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields
p.21

Effect of Sub-Surface Damage Layer Removal by Sublimation Etching of 4H-SiC Bulk Wafers on PL Imaging of Crystal Defect Visibility
p.29

Temperature Gradient Control with an Air-Pocket Design for Growth of High Quality SiC Crystal
p.37

4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering
p.43

Investigation of the Nucleation Process during the Initial Stage of PVT Growth of 4H-SiC
p.51

HomeSolid State PhenomenaSolid State Phenomena Vol. 343Prevention of Bunched Basal Plane Dislocation...

Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth

Abstract:

To prevent arrays of basal plane dislocations (BPD) forming during grown 4H-SiC single crystals, the growth cell in physical vapor transport (PVT) growth was modified by adapting the temperature gradients, the seed attachment method and the seeding phase. The resulting reduction in stress was modeled numerically and the crystals were investigated by X-ray topography (XRT) and molten potassium hydroxide (KOH) etching. Due to these modifications, the formation of BPD arrays was completely suppressed.

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Periodical:

Solid State Phenomena (Volume 343)

Pages:

9-14

DOI:

https://doi.org/10.4028/p-eu98j0

Citation:

Cite this paper

Online since:

May 2023

Authors:

Johannes Steiner*, Binh Duong Nguyen, Stefan Sandfeld, Peter J. Wellmann

Keywords:

Basal Plane Dislocation (BPD), Numerical Modeling, Physical Vapor Transport, Stress, X-Ray Topography

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Creative Commons CC BY 4.0

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* - Corresponding Author

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