Preface
Epitaxial Growth of Boron Carbide on 4H-SiC
p.3
p.3
Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth
p.9
p.9
Improvement of the Conformational Stability of 150 mm 4H SiC Wafers
p.15
p.15
High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields
p.21
p.21
Effect of Sub-Surface Damage Layer Removal by Sublimation Etching of 4H-SiC Bulk Wafers on PL Imaging of Crystal Defect Visibility
p.29
p.29
Temperature Gradient Control with an Air-Pocket Design for Growth of High Quality SiC Crystal
p.37
p.37
4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering
p.43
p.43
Investigation of the Nucleation Process during the Initial Stage of PVT Growth of 4H-SiC
p.51
p.51
Preface
Abstract:
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Info:
Periodical:
Solid State Phenomena (Volume 343)
Online since:
May 2023
Сopyright:
© 2023 Trans Tech Publications Ltd. All Rights Reserved
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