Preface
Epitaxial Growth of Boron Carbide on 4H-SiC
p.3
p.3
Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth
p.9
p.9
Improvement of the Conformational Stability of 150 mm 4H SiC Wafers
p.15
p.15
High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields
p.21
p.21
Effect of Sub-Surface Damage Layer Removal by Sublimation Etching of 4H-SiC Bulk Wafers on PL Imaging of Crystal Defect Visibility
p.29
p.29
Temperature Gradient Control with an Air-Pocket Design for Growth of High Quality SiC Crystal
p.37
p.37
4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering
p.43
p.43
Investigation of the Nucleation Process during the Initial Stage of PVT Growth of 4H-SiC
p.51
p.51
High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields
Abstract:
SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. High temperature annealing with two plateaus at 1400°C and 1700°C is performed to recrystallize the layers. The crystallinity was investigated by Raman spectroscopy with laser lines of 785, 405 and 325nm. To determine the electrical conductivity of the layers, electrical measurements are made. Only the electron beam evaporated layers presents a recrystallization close to homoepitaxial quality but, contrary to sputtered layers, they don’t have an electrical conductivity.
You might also be interested in these eBooks
Info:
Periodical:
Solid State Phenomena (Volume 343)
Pages:
21-28
Citation:
Online since:
May 2023
Permissions:
Share:
Citation: