Paper Titles

Epitaxial Growth of Boron Carbide on 4H-SiC
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HomeSolid State PhenomenaSolid State Phenomena Vol. 343Epitaxial Growth of Boron Carbide on 4H-SiC

Epitaxial Growth of Boron Carbide on 4H-SiC

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Abstract:

In this work, the successful heteroepitaxial growth of boron carbide (B_xC) on 4HSiC(0001) 4° off substrate using chemical vapor deposition (CVD) is reported. Towards this end, a two-step procedure was developed, involving the 4H-SiC substrate boridation under BCl₃ precursor at 1200°C, followed by conventional CVD under BCl₃ + C₃H₈ at 1600°C. Such a procedure allowed obtaining reproducibly monocrystalline (0001) oriented films of B_xC with a step flow morphology at a growth rate of 1.9 μm/h. Without the boridation step, the layers are systematically polycrystalline. The study of the epitaxial growth mechanism shows that a monocrystalline B_xC layer is formed after boridation but covered with a B-and Si-containing amorphous layer. Upon heating up to 1600°C, under pure H₂ atmosphere, the amorphous layer was converted into epitaxial B_xC and transient surface SiB_x and Si crystallites. These crystallites disappear upon CVD growth.

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Periodical:

Solid State Phenomena (Volume 343)

Pages:

3-8

DOI:

https://doi.org/10.4028/p-6t47nz

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Online since:

May 2023

Authors:

Yamina Benamra*, Laurent Auvray, Jérôme Andrieux, François Cauwet, Maria-Paz Alegre, Fernando Lloret, Daniel Araujo, Marina Gutierrez, Gabriel Ferro

Keywords:

4H-SiC, Boron Carbide, CVD, Heteroepitaxy

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