Improvement of the Conformational Stability of 150 mm 4H SiC Wafers

Ian Manning; Jon Searson; Kevin Moeggenborg; Matthew Gave; Gil Chung; Edward Sanchez

doi:10.4028/p-3nsf25

Paper Titles

Preface

Epitaxial Growth of Boron Carbide on 4H-SiC
p.3

Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth
p.9

Improvement of the Conformational Stability of 150 mm 4H SiC Wafers
p.15

High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields
p.21

Effect of Sub-Surface Damage Layer Removal by Sublimation Etching of 4H-SiC Bulk Wafers on PL Imaging of Crystal Defect Visibility
p.29

Temperature Gradient Control with an Air-Pocket Design for Growth of High Quality SiC Crystal
p.37

4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering
p.43

Investigation of the Nucleation Process during the Initial Stage of PVT Growth of 4H-SiC
p.51

HomeSolid State PhenomenaSolid State Phenomena Vol. 343Improvement of the Conformational Stability of 150...

Improvement of the Conformational Stability of 150 mm 4H SiC Wafers

Abstract:

A method for mitigating loss of conformational stability in 150 mm n-type 4H SiC wafers was investigated. Modifications to the physical vapor transport (PVT) process used to grow the parent bulk crystals, combined with post-growth thermal treatment, were examined as means of reducing the internal stresses hypothesized to promote instability. The magnitude of the stresses was analyzed by mechanically thinning sets of wafers produced from each process to determine the critical thickness of stability loss. The average critical thickness was found to be reduced by 13% via growth cell modification, at a reduced level of thermal treatment relative to a control process, with all wafers becoming unstable greater than 30 μm below the minimum recorded production thickness. Assessment of the spatial uniformity of dislocations indicated that lower conformational stability corresponded to elevated densities of basal plane dislocations (BPDs) and threading edge dislocations (TEDs) at the wafer edge relative to the center.

By email View Pdf

You might also be interested in these eBooks

International Conference on Silicon Carbide and Related Materials ICSCRM 2022

View Preview

Silicon Carbide Wafer Manufacturing, Optoelectronic and Electronic Devices and Technologies

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 343)

Pages:

15-19

DOI:

https://doi.org/10.4028/p-3nsf25

Citation:

Cite this paper

Online since:

May 2023

Authors:

Ian Manning*, Jon Searson, Kevin Moeggenborg, Matthew Gave, Gil Chung, Edward Sanchez

Keywords:

Dislocations, Mechanical Properties, Nitrogen Doping, Strain, Stress, Wafer Shape

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

References

[1] R. Anzalone, N. Piluso, G. Litrico, S. Lorenti, G. Arena, S. Coffa, F. La Via, Stess relaxation mechanism after thinning process on 4H SiC substrate, Mater. Sci. Forum 924, (2018) 535-538.

DOI: 10.4028/www.scientific.net/msf.924.535

Google Scholar

[2] J. Guo, Y. Yang, B. Raghothamachar, M. Dudley, S. Stoupin, Mapping of the lattice strain in 4H-SiC crystals by synchrotron double-crystal x-ray topography, J. Electron. Mater. 47, (2018) 903-909.

DOI: 10.1007/s11664-017-5789-x

Google Scholar

[3] Y. Yang, J. Guo, B. Raghothamachar, X. Chan, T. Kim, M. Dudley, Characterization of strain due to nitrogen doping concentration variations in heavy doped 4H-SiC, J. Electron. Mater. 47, (2018) 938-943.

DOI: 10.1007/s11664-017-5846-5

Google Scholar

[4] E. Nikolova, on the Twyman effect and some of its applications, J. Materi. Sci. 20, (1985) 1-8.

Google Scholar

[5] C. Clemmow, The flexure of thick circular plates, Proc. R. Soc. Lond. A 112 (1926) 559-558.

Google Scholar

[6] I. Manning, Y. Matsuda, G. Chung, E. Sanchez, M. Dudley, T. Ailihumaer, B. Raghothamachar, Progress in bulk 4H SiC crystal growth for 150 mm wafer production, Mater. Sci. Forum 1004, (2020) 37-43.

DOI: 10.4028/www.scientific.net/msf.1004.37

Google Scholar