Transfer of Heteroepitaxial Grown 3C-SiC Layers for Application in Optical Frequency Combs

Manuel Kollmuss; Xia Dong Shi; Hai Yan Ou; Peter J. Wellmann

doi:10.4028/p-58x5tx

Paper Titles

Transfer of Heteroepitaxial Grown 3C-SiC Layers for Application in Optical Frequency Combs
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Suppression of In-Grown SF Formation and BPD Propagation in 4H-Sic Epitaxial Layer by Sublimating Sub-Surface Damage before the Growth
p.9

Ni-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse Excimer Laser Annealing
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In Situ Monitoring of the Ambient Gas Phase during PVT Growth of Nominally Undoped High Resistivity SiC Boules
p.23

Study of GHz-Burst Femtosecond Laser Micro-Punching of 4H-SiC Wafers
p.29

3C-SiC Island Growth on 4H-Sic Terraces: Statistical Evidence for the Orientation Selection Rule
p.35

Development of High Quality 8 Inch 4H-SiC Substrates
p.41

Tailored Polycrystalline Substrate for SmartSiC^TM Substrates Enabling High Performance Power Devices
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HomeSolid State PhenomenaSolid State Phenomena Vol. 344Transfer of Heteroepitaxial Grown 3C-SiC Layers...

Transfer of Heteroepitaxial Grown 3C-SiC Layers for Application in Optical Frequency Combs

Abstract:

We developed a process for the fabrication of SiCOI stacks which are a suitable platform for optical devices. Starting from 3C‑on‑Si samples the silicon substrate was removed by wet chemical etching and the remaining 3C‑SiC layers were bonded to two different low refractive substrates (Al₂O₃ and polycrystalline SiC with a 3 µm thick SiO₂ layer on top deposited by PECVD). We found that also bonding onto Al₂O₃ was possible, the stability of the resulting stack wasn´t strong enough for further processing. In contrast mechanical stable SiCOI stacks could be realized using the oxide coated polycrystalline SiC as substrate. Besides the substrate materials three different bonding approaches (hydrophilic, hydrophobic and adhesive bonding using an HSQ resist) as well as multiple process parameters were analyzed with regard to the bonding performance. The best results could be achieved using the adhesive bonding approach with a bonding temperature ≥ 400°C, a process time ≥ 4 h and a bonding pressure of 96 N/cm².

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Periodical:

Solid State Phenomena (Volume 344)

Pages:

3-8

DOI:

https://doi.org/10.4028/p-58x5tx

Citation:

Cite this paper

Online since:

June 2023

Authors:

Manuel Kollmuss*, Xia Dong Shi, Hai Yan Ou, Peter J. Wellmann

Keywords:

Bonding, Cubic SiC, Frequency Combs, Thin Film Transfer

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Creative Commons CC BY 4.0

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* - Corresponding Author

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